Spin injection in silicon at zero magnetic field

L. Grenet (1) , M. Jamet (1) , P. Noé (1) , V. Calvo (1) , J.-M. Hartmann (2) , L. E. Nistor (3) , B. Rodmacq (3) , S. Auffret (3) , P. Warin (1) , Y. Samson (1)

1 SP2M - UMR 9002 - Service de Physique des Matériaux et Microstructures
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
3 SPINTEC - SPINtronique et TEchnologie des Composants

In this letter, we show efficient electrical spin injection into a SiGe based p-i-n light emitting diode from the remanent state of a perpendicularly magnetized ferromagnetic contact. Electron spin injection is carried out through an alumina tunnel barrier from a Co/Pt thin film exhibiting a strong out-of-plane anisotropy. The electron spin polarization is then analyzed through the circular polarization of emitted light. All the light polarization measurements are performed without an external applied magnetic field, i.e., in remanent magnetic states. The light polarization as a function of the magnetic field closely traces the out-of-plane magnetization of the Co/Pt injector. We could achieve a circular polarization degree of the emitted light of 3% at 5 K. Moreover this light polarization remains almost constant at least up to 200 K.

Domains: Physics [physics]; Condensed Matter [cond-mat]; Materials Science [cond-mat.mtrl-sci]

L. Grenet, M. Jamet, P. Noé, V. Calvo, J.-M. Hartmann, et al.. Spin injection in silicon at zero magnetic field. Applied Physics Letters, 2009, 94 (3), pp.032502. ⟨10.1063/1.3064135⟩. ⟨cea-01055870⟩