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Controlling the Polarity of Silicon Nanowire Transistors

Abstract : Each generation of integrated circuit (IC) technology has led to new applications. The most recent advances have enabled noninvasive surgery, three-dimensional (3D) games and movies, and intelligent cars, to name a few. A single chip can contain more than 1 billon elementary devices, and this gain in complexity has been achieved by fabricating nanometer-scale transistors used as switches or memories. Recent experimental work by De Marchi et al. (1) describes changes to the structure of one of the most basic bricks of ICs by controlling the type of conduction occurring in vertically stacked silicon (Si) nanowire transistors (see the figure, panels A and B), thus making a programmable transistor
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https://hal-cea.archives-ouvertes.fr/cea-00862664
Contributor : Bruno Savelli <>
Submitted on : Tuesday, September 17, 2013 - 11:29:50 AM
Last modification on : Thursday, June 11, 2020 - 5:04:05 PM

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T. Ernst. Controlling the Polarity of Silicon Nanowire Transistors. Science, American Association for the Advancement of Science, 2013, 340 (6139), pp.1414-1415. ⟨10.1126/science.1238630⟩. ⟨cea-00862664⟩

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