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Submicrosecond fluorescence dynamics in erbium-doped silicon-rich silicon oxide multilayers

Abstract : The energy transfer process between amorphous silicon nanoparticles and erbium ions in Er-doped silicon-rich silicon oxide is investigated by fluorescence dynamics measurements. A fast decay is observed in the wavelength range of the radiative relaxation of erbium excited ions at 1.53 μm. Alternatively to a previous interpretation, we assign this fast decay to emission of deep traps induced by Si-based sensitizers of Er3+ ions, which emit in the visible and the infrared region.
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https://hal-cea.archives-ouvertes.fr/cea-00415764
Contributor : Chantal Brassy <>
Submitted on : Thursday, September 10, 2009 - 7:30:44 PM
Last modification on : Wednesday, May 6, 2020 - 5:38:23 PM

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Antoine Al Choueiry, Bernard Jacquier, Anne-Marie Jurdyc, Fabrice Gourbilleau, Richard Rizk. Submicrosecond fluorescence dynamics in erbium-doped silicon-rich silicon oxide multilayers. Journal of Applied Physics, American Institute of Physics, 2009, 106, pp.053107. ⟨10.1063/1.3211319⟩. ⟨cea-00415764⟩

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