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Journal Articles Journal of Applied Physics Year : 2009

Submicrosecond fluorescence dynamics in erbium-doped silicon-rich silicon oxide multilayers

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Abstract

The energy transfer process between amorphous silicon nanoparticles and erbium ions in Er-doped silicon-rich silicon oxide is investigated by fluorescence dynamics measurements. A fast decay is observed in the wavelength range of the radiative relaxation of erbium excited ions at 1.53 μm. Alternatively to a previous interpretation, we assign this fast decay to emission of deep traps induced by Si-based sensitizers of Er3+ ions, which emit in the visible and the infrared region.
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Dates and versions

cea-00415764 , version 1 (10-09-2009)

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Antoine Al Choueiry, Bernard Jacquier, Anne-Marie Jurdyc, Fabrice Gourbilleau, Richard Rizk. Submicrosecond fluorescence dynamics in erbium-doped silicon-rich silicon oxide multilayers. Journal of Applied Physics, 2009, 106, pp.053107. ⟨10.1063/1.3211319⟩. ⟨cea-00415764⟩
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