Submicrosecond fluorescence dynamics in erbium-doped silicon-rich silicon oxide multilayers

Antoine Al Choueiry (1) , Bernard Jacquier (1) , Anne-Marie Jurdyc (1) , Fabrice Gourbilleau (2) , Richard Rizk (2)

1 LPCML - Laboratoire de Physico-Chimie des Matériaux Luminescents
2 CIMAP - UMR 6252 - Centre de recherche sur les Ions, les MAtériaux et la Photonique

The energy transfer process between amorphous silicon nanoparticles and erbium ions in Er-doped silicon-rich silicon oxide is investigated by fluorescence dynamics measurements. A fast decay is observed in the wavelength range of the radiative relaxation of erbium excited ions at 1.53 μm. Alternatively to a previous interpretation, we assign this fast decay to emission of deep traps induced by Si-based sensitizers of Er3+ ions, which emit in the visible and the infrared region.

Domaines: Optique / photonique

Antoine Al Choueiry, Bernard Jacquier, Anne-Marie Jurdyc, Fabrice Gourbilleau, Richard Rizk. Submicrosecond fluorescence dynamics in erbium-doped silicon-rich silicon oxide multilayers. Journal of Applied Physics, 2009, 106, pp.053107. ⟨10.1063/1.3211319⟩. ⟨cea-00415764⟩