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Silicon-rich SiO2 /SiO2 multilayers: A promising material for the third generation of solar cell

Abstract : Si-rich-SiO2(SRSO)/SiO2 multilayers (MLs) have been grown by reactive magnetron sputtering. The presence of silicon nanoclusters (Si-ncls) within the SRSO sublayer and annealing temperature influence optical absorption as well as photoluminescence. The optimized annealing temperature has been found to be 1100 °C, which allows the recovery of defects and thus enhances photoluminescence. Four MLs with Si-ncl size ranging from 1.5 to 8 nm have been annealed using the optimized conditions and then studied by transmission measurements. Optical absorption has been modeled so that a size effect in the linear absorption coefficient α (in cm−1) has been evidenced and correlated with TEM observations. It is demonstrated that amorphous Si-ncl absorption is fourfold higher than that of crystalline Si-ncls.
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https://hal-cea.archives-ouvertes.fr/cea-00407925
Contributor : Chantal Brassy <>
Submitted on : Monday, July 27, 2009 - 10:18:40 PM
Last modification on : Friday, July 17, 2020 - 9:10:04 AM

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  • HAL Id : cea-00407925, version 1

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F. Gourbilleau, C. Ternon, D. Maestre, Olivier Palais, C. Dufour. Silicon-rich SiO2 /SiO2 multilayers: A promising material for the third generation of solar cell. Journal of Applied Physics, American Institute of Physics, 2009, 106, pp.013501. ⟨cea-00407925⟩

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