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Production of pulsed, mass-selected beams of metal and semiconductor clusters

Abstract : We report on the development of a beam line for mass-selected metal and semiconductor clusters. The cluster source combines the principles of plasma sputtering and gas condensation. Both techniques together allow to produce clusters in a wide size range. With the aid of a time-of-flight system, small clusters (i.e., Cun+, n<100) are selected and pure beams containing only one cluster size are provided. For large clusters (containing several thousands of atoms), a beam with a narrow size distribution is obtained. A 90° quadrupole deviator is used to separate charged clusters from neutral ones.
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Submitted on : Tuesday, April 7, 2009 - 7:41:17 PM
Last modification on : Tuesday, June 14, 2022 - 7:06:55 AM


  • HAL Id : cea-00374093, version 1


Omar Kamalou, Jimmy Rangama, Jean-Marc Ramillon, Patrick Guinement, Bernd A. Huber. Production of pulsed, mass-selected beams of metal and semiconductor clusters. Review of Scientific Instruments, American Institute of Physics, 2008, 79, pp.063301. ⟨cea-00374093⟩



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