Interband and intersubband optical characterization of semipolar (112¯2)-oriented GaN/AlN multiple-quantum-well structures - Archive ouverte HAL Access content directly
Journal Articles Applied Physics Letters Year : 2008

Interband and intersubband optical characterization of semipolar (112¯2)-oriented GaN/AlN multiple-quantum-well structures

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Abstract

We report on semipolar GaN/AlN multiple-quantum-well structures grown on m-plane sapphire by plasma-assisted molecular-beam epitaxy. Optical investigation confirms a significant reduction in the quantum-confined Stark effect, in agreement with theoretical calculations, which predict an internal electric field between 0.6 and −0.55 MV/cm in the quantum wells, depending on the strain state. With respect to polar materials, the reduction in the internal electric field results in a substantial redshift of the intersubband energy.
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Dates and versions

cea-00373661 , version 1 (06-04-2009)

Identifiers

  • HAL Id : cea-00373661 , version 1

Cite

L. Lahourcade, P. K. Kandaswamy, J. Renard, Pierre Ruterana, H. Machhadani, et al.. Interband and intersubband optical characterization of semipolar (112¯2)-oriented GaN/AlN multiple-quantum-well structures. Applied Physics Letters, 2008, 93, pp.111906. ⟨cea-00373661⟩
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