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Interband and intersubband optical characterization of semipolar (112¯2)-oriented GaN/AlN multiple-quantum-well structures

Abstract : We report on semipolar GaN/AlN multiple-quantum-well structures grown on m-plane sapphire by plasma-assisted molecular-beam epitaxy. Optical investigation confirms a significant reduction in the quantum-confined Stark effect, in agreement with theoretical calculations, which predict an internal electric field between 0.6 and −0.55 MV/cm in the quantum wells, depending on the strain state. With respect to polar materials, the reduction in the internal electric field results in a substantial redshift of the intersubband energy.
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https://hal-cea.archives-ouvertes.fr/cea-00373661
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Submitted on : Monday, April 6, 2009 - 5:49:21 PM
Last modification on : Sunday, June 26, 2022 - 11:49:37 AM

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  • HAL Id : cea-00373661, version 1

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L. Lahourcade, P. K. Kandaswamy, J. Renard, Pierre Ruterana, H. Machhadani, et al.. Interband and intersubband optical characterization of semipolar (112¯2)-oriented GaN/AlN multiple-quantum-well structures. Applied Physics Letters, American Institute of Physics, 2008, 93, pp.111906. ⟨cea-00373661⟩

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