Interband and intersubband optical characterization of semipolar (112¯2)-oriented GaN/AlN multiple-quantum-well structures

L. Lahourcade (1) , P. K. Kandaswamy (1) , J. Renard (1) , Pierre Ruterana (2) , H. Machhadani (3) , M. Tchernycheva (3) , F.H. Julien (3) , B. Gayral (1) , E. Monroy (1)

1 NPSC - Nanophysique et Semiconducteurs
2 CIMAP - UMR 6252 - Centre de recherche sur les Ions, les MAtériaux et la Photonique
3 IEF - Institut d'électronique fondamentale

We report on semipolar GaN/AlN multiple-quantum-well structures grown on m-plane sapphire by plasma-assisted molecular-beam epitaxy. Optical investigation confirms a significant reduction in the quantum-confined Stark effect, in agreement with theoretical calculations, which predict an internal electric field between 0.6 and −0.55 MV/cm in the quantum wells, depending on the strain state. With respect to polar materials, the reduction in the internal electric field results in a substantial redshift of the intersubband energy.

Domains: Physics [physics]; Condensed Matter [cond-mat]; Materials Science [cond-mat.mtrl-sci]

L. Lahourcade, P. K. Kandaswamy, J. Renard, Pierre Ruterana, H. Machhadani, et al.. Interband and intersubband optical characterization of semipolar (112¯2)-oriented GaN/AlN multiple-quantum-well structures. Applied Physics Letters, 2008, 93, pp.111906. ⟨cea-00373661⟩