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Journal Articles physica status solidi (a) Year : 2008

Growth and characterization of gallium oxide thin films by radiofrequency magnetron sputtering

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Abstract

Undoped and Neodymium-doped gallium oxide (Ga2O3) thin films of about 500 nm thickness were successfully grown at different temperatures ranging from 100 up to 600 °C by radiofrequency magnetron sputtering. Post-annealing treatments were carried out at 900 °C and 1000 °C. The obtained films were (400) textured and a grain size of a few tens of nanometres was found. Optical and electrical characterizations led to a figure of merit of about 1.9 × 10-4. These films were successfully doped with Neodymium by a co-sputtering method. The photoluminescence experiments for the Nd-doped β-Ga2O3 films clearly showed the rare-earth emitting signature.
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Dates and versions

cea-00373313 , version 1 (03-04-2009)

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  • HAL Id : cea-00373313 , version 1

Cite

Philippe Marie, Xavier Portier, Julien Cardin. Growth and characterization of gallium oxide thin films by radiofrequency magnetron sputtering. physica status solidi (a), 2008, 205 (8), pp.1943-1946. ⟨cea-00373313⟩
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