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Growth and characterization of gallium oxide thin films by radiofrequency magnetron sputtering

Abstract : Undoped and Neodymium-doped gallium oxide (Ga2O3) thin films of about 500 nm thickness were successfully grown at different temperatures ranging from 100 up to 600 °C by radiofrequency magnetron sputtering. Post-annealing treatments were carried out at 900 °C and 1000 °C. The obtained films were (400) textured and a grain size of a few tens of nanometres was found. Optical and electrical characterizations led to a figure of merit of about 1.9 × 10-4. These films were successfully doped with Neodymium by a co-sputtering method. The photoluminescence experiments for the Nd-doped β-Ga2O3 films clearly showed the rare-earth emitting signature.
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https://hal-cea.archives-ouvertes.fr/cea-00373313
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Submitted on : Friday, April 3, 2009 - 6:15:43 PM
Last modification on : Friday, December 6, 2019 - 9:14:09 AM

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  • HAL Id : cea-00373313, version 1

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Philippe Marie, Xavier Portier, Julien Cardin. Growth and characterization of gallium oxide thin films by radiofrequency magnetron sputtering. physica status solidi (a), Wiley, 2008, 205 (8), pp.1943-1946. ⟨cea-00373313⟩

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