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The silicon-silicon oxide multilayers utilization as intrinsic layer on pin solar cells

Abstract : Silicon nanostructures are promising candidate for the intrinsic layer on pin solar cells. In this work we report on new material: silicon-rich silicon oxide (SRSO) deposited by reactive magnetron sputtering of a pure silica target and an interesting structure: multilayers consisting of a stack of SRSO and pure silicon oxide layers. Two thicknesses of the SRSO sublayer, tSRSO, are studied 3 nm and 5 nm whereas the thickness of silica sublayer is maintaining at 3 nm. The presence of nanocrystallites of silicon, evidenced by X-Ray diffraction (XRD), leads to photoluminescence (PL) emission at room temperature due to the quantum confinement of the carriers. The PL peak shifts from 1.3 eV to 1.5 eV is correlated to the decreasing of tSRSO from 5 nm down to 3 nm. In the purpose of their potential utilization for i-layer, the optical properties are studied by absorption spectroscopy. The achievement a such structures at promising absorption properties. Moreover by favouring the carriers injection by the tunnel effect between silicon nanograins and silica sublayers, the multilayers seem to be interesting for solar cells.
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https://hal-cea.archives-ouvertes.fr/cea-00372542
Contributor : Chantal Brassy <>
Submitted on : Wednesday, April 1, 2009 - 2:52:48 PM
Last modification on : Wednesday, May 6, 2020 - 5:38:23 PM

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  • HAL Id : cea-00372542, version 1

Citation

Héloïse Colder, Philippe Marie, Fabrice Gourbilleau. The silicon-silicon oxide multilayers utilization as intrinsic layer on pin solar cells. Thin Solid Films, Elsevier, 2008, 516, pp.6930-6933. ⟨cea-00372542⟩

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