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Two colour experiments in Eu3+ implanted GaN

Abstract : Two colour experiments can be used to study the excitation mechanisms of rare-earth ions in rare-earth doped wide-bandgap semiconductors as well as the quenching of their photoluminescence (PL). The combined excitation of Eu3+ implanted GaN samples with a pulsed laser and a CW laser, corresponding, respectively, to a below bandgap excitation and to an above bandgap excitation, is investigated. A strong quenching of the rare-earth (RE) luminescence is observed with both lasers compared to the excitation with only one laser. The dependence of the Eu3+ 5D0 lifetime quenching with the emission wavelength and excitation density of the CW laser is presented. The results are explained within the frame of a model describing the occurrence of an Auger effect between excited Eu ions and free carriers created by the CW laser.
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Submitted on : Wednesday, December 3, 2008 - 6:46:58 PM
Last modification on : Saturday, June 25, 2022 - 9:45:57 AM


  • HAL Id : cea-00344143, version 1


Loic Bodiou, Alain Braud, Jean-Louis Doualan, Richard Moncorgé, K. Lorenz, et al.. Two colour experiments in Eu3+ implanted GaN. Journal of Alloys and Compounds, Elsevier, 2008, 451, pp.140-142. ⟨cea-00344143⟩



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