Skip to Main content Skip to Navigation
Journal articles

In-Plane Silicon-On-Nothing Nanometer-Scale Resonant Suspended Gate MOSFET for In-IC Integration Perspectives

Abstract : A14-MHz in-plane nanoelectromechanical resonator based on a resonant-suspended-gate (RSG) MOSFET principle and integrated in a front-end process is demonstrated. The devices are in-plane flexural vibration mode beams (L = 10 μm, w = 165 nm, and h = 400 nm) with 120-nm gaps. This letter details the design and process flow fabrication steps. Then, the electrical device characteristics are demonstrated, comprising static and dynamic studies around the resonant frequency. Devices enable the comparison of a pure capacitive detection with the RSG-MOSFET-based detection on the same component, showing a 4.3-dB-huge peak. Due to its output signal amplification and in-IC integration potentialities, the RSG-MOSFET-based detection is ideal for any type of nanoelectromechanical structure displacement detection.
Complete list of metadatas

Cited literature [7 references]  Display  Hide  Download

https://hal-cea.archives-ouvertes.fr/cea-00320837
Contributor : Cédric Durand <>
Submitted on : Saturday, September 20, 2008 - 10:43:39 AM
Last modification on : Monday, March 2, 2020 - 1:38:02 PM
Long-term archiving on: : Thursday, June 3, 2010 - 7:27:09 PM

File

2008_Durand_EDL_In-Plane_SON_R...
Files produced by the author(s)

Identifiers

  • HAL Id : cea-00320837, version 1

Collections

Citation

Cédric Durand, Fabrice Casset, Philippe Renaux, Nicolas Abelé, Bernard Legrand, et al.. In-Plane Silicon-On-Nothing Nanometer-Scale Resonant Suspended Gate MOSFET for In-IC Integration Perspectives. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2008, 29 (5), pp.494-496. ⟨cea-00320837⟩

Share

Metrics

Record views

266

Files downloads

639