Characterization of IN-IC integrable in-plane nanometer scale resonators fabricated by a silicon on nothing advanced CMOS technology

Cédric Durand (1, 2, 3) , Fabrice Casset (1) , Bernard Legrand (2) , Marc Faucher (2) , Philippe Renaux (4) , Denis Mercier (4) , Denis Renaud (5) , Didier Dutartre (3) , Eric Ollier (1) , Pascal Ancey (3) , Lionel Buchaillot (2)

1 LCMS - Laboratoire Composants Microsystèmes
2 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
3 ST-CROLLES - STMicroelectronics [Crolles]
4 LCFM - Laboratoire Caratérisation et Fiabilité des Microsystèmes
5 SDOT - Services des Opérations Technologiques

The paper reports on in-plane nanometer scale resonators fabricated on 8 inch industrial tools, with a process based on the advanced CMOS Front End Silicon On Nothing Technology. The aim is to propose totally integrated time reference functions realized by small size NEMS resonators. The measurement set-up, simulation and experimental results in the range of 100MHz are presented. Environmental issues such as temperature and pressure influence on the resonator behavior are also investigated. Results are discussed and compared with analytic calculation, finite element and electrical simulations with good agreement. Work in progress focuses on improving the f.Q product, detection by the use of integrated MOSFET transistors, low voltage operation and in-IC integration.

Keywords: MEMS; Electromechanical Resonator; Silicon On Nothing; SON; Nano

Domains: Engineering Sciences [physics]; Micro and nanotechnologies/Microelectronics

Cédric Durand, Fabrice Casset, Bernard Legrand, Marc Faucher, Philippe Renaux, et al.. Characterization of IN-IC integrable in-plane nanometer scale resonators fabricated by a silicon on nothing advanced CMOS technology. 21st IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2008, Jan 2008, Tucson - AZ, United States. pp.1016-1019, ⟨10.1109/MEMSYS.2008.4443831⟩. ⟨cea-00320830⟩