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Growth of one-dimensional Si/SiGe heterostructures by thermal CVD

Abstract : The first results on a simple new process for the direct fabrication of one-dimensional superlattices using common CVD chambers are presented. The experiments were carried out in a 200 mm industrial Centura reactor (Applied Materials). Low dimensionality and superlattices allow a significant increase in the figure of merit of thermoelectrics by controlling the transport of phonons and electrons. The monocrystalline nanowires produced according to this process are both one-dimensional and present heterostructures, with very thin layers (40 nm) of Si and SiGe. Concentrations up to 30 at.% Ge were obtained in the SiGe parts. Complementary techniques including transmission electronic microscopy (TEM), selected area electron diffraction (SAED), energy dispersive x-ray spectroscopy (EDS), scanning transmission electron microscopy (STEM) in bright field and high angle annular dark field (HAADF STEM), and energy-filtered transmission electron microscopy (EF-TEM) were used to characterize the nanoheterostructures.
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Contributor : Céline Mouchet Connect in order to contact the contributor
Submitted on : Wednesday, August 20, 2008 - 9:43:13 AM
Last modification on : Monday, November 29, 2021 - 8:26:04 AM
Long-term archiving on: : Saturday, November 26, 2016 - 12:58:45 AM


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Céline Mouchet, Laurence Latu-Romain, Cyril Cayron, Emmanuelle Rouvière, Caroline Celle, et al.. Growth of one-dimensional Si/SiGe heterostructures by thermal CVD. Nanotechnology, Institute of Physics, 2008, 19 (335603), ⟨10.1088/0957-4484/19/33/335603⟩. ⟨cea-00308133⟩



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