Polarity conversion of hydride vapor phase epitaxy growing GaN via growth interruption modulation - Archive ouverte HAL Access content directly
Journal Articles Thin Solid Films Year : 2008

Polarity conversion of hydride vapor phase epitaxy growing GaN via growth interruption modulation

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Abstract

GaN films were deposited by hydride vapor phase epitaxy with andwithout adopting growth interruption modulation (GIM). The surface morphologies of these samples were observed by atomic force microscopy. After chemical etching, the surface morphology of GaN film grown directly on sapphire changed greatly and turned out to be N-polarity, which could be changed into Ga-polarity when growing via interruption modulation. Photoluminescence spectra showed that optical property of Ga-polar film was better than that of N-polar film. High resolution X-ray diffraction revealed the high crystalline quality GaN film grown by using the GIM method. The polarity conversion was the result of surface reconstruction when adopting GIM method.
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Dates and versions

cea-00306400 , version 1 (25-07-2008)

Identifiers

  • HAL Id : cea-00306400 , version 1

Cite

Benliang Lei, Guanghui Yu, Haohua Ye, Sheng Meng, Xinzhong Wang, et al.. Polarity conversion of hydride vapor phase epitaxy growing GaN via growth interruption modulation. Thin Solid Films, 2008, 516, pp.3772-3775. ⟨cea-00306400⟩
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