Polarity conversion of hydride vapor phase epitaxy growing GaN via growth interruption modulation

Benliang Lei (1, 2) , Guanghui Yu (1) , Haohua Ye (1) , Sheng Meng (1) , Xinzhong Wang (1, 2) , Chaotong Lin (1, 2) , Ming Qi (1) , Aizhen Li (1) , Gérard Nouet (3) , Pierre Ruterana (3) , Jun Chen (4)

1 State Key Laboratory of Functional Materials for Informatics
2 GSCAS - Graduate School of the Chinese Academy of Sciences
3 CIMAP - UMR 6252 - Centre de recherche sur les Ions, les MAtériaux et la Photonique
4 Laboratoire de Recherche sur les Propriétés des Matériaux Nouveaux

GaN films were deposited by hydride vapor phase epitaxy with andwithout adopting growth interruption modulation (GIM). The surface morphologies of these samples were observed by atomic force microscopy. After chemical etching, the surface morphology of GaN film grown directly on sapphire changed greatly and turned out to be N-polarity, which could be changed into Ga-polarity when growing via interruption modulation. Photoluminescence spectra showed that optical property of Ga-polar film was better than that of N-polar film. High resolution X-ray diffraction revealed the high crystalline quality GaN film grown by using the GIM method. The polarity conversion was the result of surface reconstruction when adopting GIM method.

Keywords: GaN; Polarity; HVPE; AFM; PL; XRD

Domains: Materials Science [cond-mat.mtrl-sci]

Benliang Lei, Guanghui Yu, Haohua Ye, Sheng Meng, Xinzhong Wang, et al.. Polarity conversion of hydride vapor phase epitaxy growing GaN via growth interruption modulation. Thin Solid Films, 2008, 516, pp.3772-3775. ⟨cea-00306400⟩