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Quantification of the carrier absorption losses in Si-nanocrystal rich rib waveguides at 1.54 µm

Abstract : A detailed study of the carrier absorption (CA) mechanism in multilayered silicon-nanocrystals (Si-nc) rib waveguides is reported. A pump (532 nm) and probe (1535 nm) technique is used to assess two loss mechanisms due to optical excitation of the system: one characterized by slow (seconds) dynamics related to heating and the other characterized by fast (microsecond) dynamics associated to CA mechanisms within the Si-nc. CA losses increase with pumping flux of up to 6 dB/cm for 3x1020 photons/cm2 s. By comparing the temporal dynamics of CA losses and time resolved photoluminescence, we suggest that both are determined by exciton generation and recombination.
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https://hal-cea.archives-ouvertes.fr/cea-00273527
Contributor : Chantal Brassy <>
Submitted on : Tuesday, April 15, 2008 - 3:11:06 PM
Last modification on : Wednesday, May 6, 2020 - 5:38:23 PM

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  • HAL Id : cea-00273527, version 1

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D. Navarro-Urrios, A. Pitanti, N. Daldosso, Fabrice Gourbilleau, Richard Rizk, et al.. Quantification of the carrier absorption losses in Si-nanocrystal rich rib waveguides at 1.54 µm. Applied Physics Letters, American Institute of Physics, 2008, 92, pp.051101. ⟨cea-00273527⟩

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