Quantification of the carrier absorption losses in Si-nanocrystal rich rib waveguides at 1.54 µm - Archive ouverte HAL Access content directly
Journal Articles Applied Physics Letters Year : 2008

Quantification of the carrier absorption losses in Si-nanocrystal rich rib waveguides at 1.54 µm

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Abstract

A detailed study of the carrier absorption (CA) mechanism in multilayered silicon-nanocrystals (Si-nc) rib waveguides is reported. A pump (532 nm) and probe (1535 nm) technique is used to assess two loss mechanisms due to optical excitation of the system: one characterized by slow (seconds) dynamics related to heating and the other characterized by fast (microsecond) dynamics associated to CA mechanisms within the Si-nc. CA losses increase with pumping flux of up to 6 dB/cm for 3x1020 photons/cm2 s. By comparing the temporal dynamics of CA losses and time resolved photoluminescence, we suggest that both are determined by exciton generation and recombination.
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Dates and versions

cea-00273527 , version 1 (15-04-2008)

Identifiers

  • HAL Id : cea-00273527 , version 1

Cite

D. Navarro-Urrios, A. Pitanti, N. Daldosso, Fabrice Gourbilleau, Richard Rizk, et al.. Quantification of the carrier absorption losses in Si-nanocrystal rich rib waveguides at 1.54 µm. Applied Physics Letters, 2008, 92, pp.051101. ⟨cea-00273527⟩
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