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Theory of the Anomalous Tunnel Hall Effect at Ferromagnet-Semiconductor Junctions

Abstract : We report on theoretical investigations of carrier scattering asymmetry at ferromagnet-semiconductor junctions. By an analytical 2 × 2 spin model, we show that, when Dresselhaus interactions is included in the conduction band of III-V T d symmetry group semiconductors, the electrons may undergo a difference of transmission vs. the sign of their incident parallel wavevector normal to the in-plane magnetization. This asymmetry is universally scaled by a unique function independent of the spin-orbit strength. This particular feature is reproduced by a multiband k • p tunneling transport model. Astonishingly, the asymmetry of transmission persists in the valence band of semiconductors owing to the inner atomic spin-orbit strength and free of asymmetric potentials. We present multiband 14 × 14 and 30 × 30 k • p tunneling models together with tunneling transport perturbation calculations corroborating these results. Those demonstrate that a tunnel spin-current normal to the interface can generate a surface transverse charge current, the so-called Anomalous Tunnel Hall Effect.
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https://hal.archives-ouvertes.fr/hal-03320912
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T. Huong Dang, D. Quang To, E. Erina, T.L. Hoai Nguyen, V.I. Safarov, et al.. Theory of the Anomalous Tunnel Hall Effect at Ferromagnet-Semiconductor Junctions. Journal of Magnetism and Magnetic Materials, Elsevier, 2019, 459, pp.37-42. ⟨10.1016/j.jmmm.2017.12.065⟩. ⟨hal-03320912⟩

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