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Article Dans Une Revue Journal of Applied Physics Année : 2017

Ambipolar spin diffusion in p-type GaAs: A case where spin diffuses more than charge

Résumé

We investigate the diffusion of charge and spin at 15 K in p-type GaAs, combining transient-grating and energy-resolved microluminescence measurements to cover a broad range of photoelectron density. At very low optical power, in a unipolar nondegenerate regime, charge and spin diffuse at the same rate, implying that the spin-drag effects are negligible. Upon increasing the photoelectron concentration up to about 1016 cm–3, the charge diffusion constant decreases because of ambipolar electrostatic interactions with the slower-diffusing holes while the spin diffusion constant is reduced only weakly by the ambipolar interaction. A further increase in the excitation power causes increases in both the charge and spin diffusion constants as a consequence of the Pauli principle since the photoelectron gas becomes degenerate.
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Dates et versions

hal-02345440 , version 1 (24-05-2022)

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Fabian Cadiz, V. Notot, J. Filipovic, D. Paget, C. Weber, et al.. Ambipolar spin diffusion in p-type GaAs: A case where spin diffuses more than charge. Journal of Applied Physics, 2017, 122 (9), pp.095703. ⟨10.1063/1.4985831⟩. ⟨hal-02345440⟩
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