Luminescence imaging of photoelectron spin precession during drift in a p-type GaAs microfabricated Hall bar

V. Notot (1) , D. Paget (1) , A. Rowe (1) , L. Martinelli (1) , Fabian Cadiz (2, 3) , S. Arscott (4)

1 LPMC - Laboratoire de physique de la matière condensée
2 UT3 - Université Toulouse III - Paul Sabatier
3 CNRS - Centre National de la Recherche Scientifique
4 NAM6 - IEMN - Nano and Microsystems - IEMN

Using a microfabricated p-type GaAs Hall bar, it is shown that the combined application of co-planar electric and magnetic fields enables the observation of spatial oscillations of the photoluminescence circular polarization due to the precession of drifting spin-polarized photoelectrons. Observation of these oscillations as a function of electric field gives a direct measurement of the minority carrier drift mobility and reveals that the spin coherence length can be tuned up to more than 10μm with electric fields below 1 kV/cm

Domaines: Micro et nanotechnologies/Microélectronique

V. Notot, D. Paget, A. Rowe, L. Martinelli, Fabian Cadiz, et al.. Luminescence imaging of photoelectron spin precession during drift in a p-type GaAs microfabricated Hall bar. Journal of Applied Physics, 2017, 121 (12), pp.125703. ⟨10.1063/1.4979097⟩. ⟨hal-02345426⟩