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Design of AlGaN/AlN Dot‐in‐a‐Wire Heterostructures for Electron‐Pumped UV Emitters

Abstract : This article describes the fabrication of nitrogen‐polar AlxGa1−xN/AlN (x = 0, 0.1) quantum dot (QD) superlattices (SLs) integrated along GaN nanowires (NWs) for application in electron‐pumped UV sources. The NWs are grown using plasma‐assisted molecular beam epitaxy on n‐type Si(111) wafers using a low‐temperature AlN nucleation layer. Growth conditions are tuned to obtain a high density of noncoalesced NWs. To improve the uniformity of the height along the substrate, the growth begins with a long (≈900 nm) NW base, with a diameter of 30–50 nm. The AlxGa1−xN/AlN active region is 400 nm long (88 periods of QDs), long enough to collect the electron–hole pairs generated by an electron beam with an acceleration voltage ≤5 kV. The spectral response is tuned in the 340–258 nm range by varying the dot/barrier thickness ratio and the Al content in the dots. Internal quantum efficiencies as high as 63% are demonstrated.
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Submitted on : Monday, November 9, 2020 - 11:55:33 AM
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Ioanna Dimkou, Anjali Harikumar, Akhil Ajay, Fabrice Donatini, Edith Bellet-Amalric, et al.. Design of AlGaN/AlN Dot‐in‐a‐Wire Heterostructures for Electron‐Pumped UV Emitters. physica status solidi (a), Wiley, 2020, 217 (7), pp.1900714. ⟨10.1002/pssa.201900714⟩. ⟨hal-02413833v2⟩

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