High κ for MIM and RRAM applications: Impact of the metallic electrode and oxygen vacancies

Christophe Vallée (1) , Patrice Gonon (1) , Jorel Corentin (1) , Fadhel El Kamel (2) , Mathieu Mougenot (3) , Vincent Jousseaume (4)

1 LTM - Laboratoire des technologies de la microélectronique
2 G2ELab - Laboratoire de Génie Electrique de Grenoble
3 GREMI - Groupe de recherches sur l'énergétique des milieux ionisés
4 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

Influence of metallic electrode and oxygen vacancies in MIM capacitors and MIM RRAM high κ based devices is studied. For both MIM capacitors and MIM RRAM it is shown that the electrode composition strongly influences the overall behavior of the devices and more precisely, the capacitance–voltage curve (nonlinearities) for MIM capacitors, and the switching mechanism (SET/RESET) for MIM RRAM. Best results for HfO2 RRAM are obtained with Pt as bottom electrode instead of TiN while very low capacitance variations are observed for high work function electrodes, or more precisely electrodes with low oxygen affinity. These evolutions are related to the oxygen vacancies concentration and migration to the cathode electrode/high κ interface.

Domaines: Micro et nanotechnologies/Microélectronique

Christophe Vallée, Patrice Gonon, Jorel Corentin, Fadhel El Kamel, Mathieu Mougenot, et al.. High κ for MIM and RRAM applications: Impact of the metallic electrode and oxygen vacancies. Microelectronic Engineering, 2009, 86 (7-9), pp.1774. ⟨10.1016/j.mee.2009.03.001⟩. ⟨hal-00455501⟩