Absorption coefficient and non-equilibrium generalized Planck's law for improved hot carrier photoluminescence spectroscopy

François Gibelli (1) , Laurent Lombez (1) , Jean-Francois Guillemoles (1)

1 IRDEP - Institut de Recherche et Développement sur l'Energie Photovoltaïque

The generalized Planck's law describes the light emitted by a blackbody. In the past this law has been generalized to semiconductors. Whereas Planck's orginial formulation roots on a same temperature between the body and the emitted photon gas, the generalized expression for semiconductors has been used to describe electron-hole plasmas in non-equilibrium with the lattice. Here we show experimentally how to determine different electron and hole temperatures in non-equilibrium with the pho-ton gas. Since the absorption coefficient varies with the carrier density and is part of the generalize Planck's law, we particularly emphasize the importance of the absorption coefficient in the analysis of hot carrier photoluminescence spectra. Index Terms-hot carrier solar cells, hot carrier photolumines-cence, non-equilibrium generalized Planck's law, non-equilibrium electron and hole distributions

Domaines: Matière Condensée [cond-mat]

François Gibelli, Laurent Lombez, Jean-Francois Guillemoles. Absorption coefficient and non-equilibrium generalized Planck's law for improved hot carrier photoluminescence spectroscopy. 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016, Portland, United States. ⟨10.1109/PVSC.2016.7750336⟩. ⟨hal-02344154⟩