Reflective Back Contacts for Ultrathin Cu(In,Ga)Se2-Based Solar Cells

Louis Gouillart (1, 2) , Wei-Chao Chen (3) , Andrea Cattoni (2) , Julie Goffard (2) , Lars Riekehr (3) , Jan Keller (3) , Marie Jubault (4) , Negar Naghavi (1) , Marika Edoff (3) , Stéphane Collin (2)

1 IPVF - Institut Photovoltaïque d’Ile-de-France (UMR)
2 C2N - Centre de Nanosciences et de Nanotechnologies
3 Uppsala University
4 IRDEP - Institut de Recherche et Développement sur l'Energie Photovoltaïque

We developed a highly reflective back contact for Cu(In,Ga)Se 2 solar cells based on silver encapsulated in a TCOs stack, compatible with substrate configuration. We demonstrated ultra-thin (500 nm) Cu(In,Ga)Se 2 solar cells with 13.5% efficiency and state of the art J SC =28.9 mA/cm 2 , 2.7 mA/cm 2 more than the reference cell on molybdenum. We also demonstrated a 530 nm-thick (Ag,Cu)(In,Ga)Se 2 solar cell on Mo with state of the art efficiency (14.9%) and remarkably high V OC (741 mV) and FF (81.8%). Coupled with a highly reflective back contact for improved J SC , ACIGS has the potential for fabricating a 500 nm-thick ACIGS with 18% efficiency.

Mots clés: light trapping; Cu)(In; Ga)Se 2; (Ag; Ultra-thin Cu(In; In2O3:Sn; photovoltaic; ultrathin; Cu(InGa)Se2; reflective back contacts

Domaines: Matériaux; Optique [physics.optics]

Louis Gouillart, Wei-Chao Chen, Andrea Cattoni, Julie Goffard, Lars Riekehr, et al.. Reflective Back Contacts for Ultrathin Cu(In,Ga)Se2-Based Solar Cells. IEEE Journal of Photovoltaics, In press, 10 (1), pp.1-5. ⟨10.1109/JPHOTOV.2019.2945196⟩. ⟨hal-02327808⟩