Bi ultra-thin crystalline films on InAs(1 1 1) A and B substrates: a combined core-level and valence-band angle-resolved and dichroic photoemission study - IRAMIS Accéder directement au contenu
Article Dans Une Revue New Journal of Physics Année : 2019

Bi ultra-thin crystalline films on InAs(1 1 1) A and B substrates: a combined core-level and valence-band angle-resolved and dichroic photoemission study

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The growth of Bi on both the In-terminated (A) face and the As-terminated (B) face of InAs(1 1 1) has been investigated by low-energy electron diffraction, scanning tunnelling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4 d and Bi 5$d_{5/2}$ photoelectron signals allow to get a comprehensive picture of the Bi/InAs(1 1 1) interface. From the early stage the Bi growth on the A face is epitaxial, contrary to that on the B face that proceeds via the formation of islands. Angle-resolved photoelectron spectra show that the electronic structure of a Bi deposit of ≈10 bi-layers on the A face is identical to that of bulk Bi, while more than ≈30 bi-layers are needed for the B face. Both bulk and surface electronic states observed are well accounted for by fully relativistic ab initio calculations performed using the one-step model of photoemission. These calculations are used to analyse the dichroic photoemission data recorded in the vicinity of the Fermi level around the $\bar{Γ}$ point of the Brillouin zone.
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hal-03943885 , version 1 (17-01-2023)

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L Nicolaï, J-M Mariot, U Djukic, W Wang, O Heckmann, et al.. Bi ultra-thin crystalline films on InAs(1 1 1) A and B substrates: a combined core-level and valence-band angle-resolved and dichroic photoemission study. New Journal of Physics, 2019, 21, pp.123012. ⟨10.1088/1367-2630/ab5c14⟩. ⟨hal-03943885⟩
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