Hot Carriers-Induced Nonlinear Photoluminescence in Thin Indium Tin Oxide Layer Patterned by Ga Ion Beam Milling

Florian Dell'Ova (1) , Konstantin Malchow (1) , Rémi Chassagnon (1) , Olivier Heintz (1) , Nicolas Pocholle (1) , Gérard Colas Des Francs (1) , Erik Dujardin (1, 2) , Alexandre Bouhelier (1)

1 ICB - Laboratoire Interdisciplinaire Carnot de Bourgogne
2 CEMES-GNS - Groupe NanoSciences

This paper explores the nonlinear photoluminescence emitted by Indium Tin Oxide (ITO) thin layers patterned by focused gallium ion beam milling. Using tightly focused near-infrared femtosecond pulsed laser excitation, a broad up-converted luminescence spanning the visible spectrum is detected. The intensity of the luminescence follows a non-monotonous relationship with milling doses and can be related to the modification of the ITO electronic band structure by the implantation of Ga ions. The shape and the power dependence of the spectrum share strong similarities with nonlinear photoluminescence arising from metals. The results are consistent with a nonlinear luminescence process originating from the radiative decay of photo-generated hot carriers. The ther-1 mal coefficient relating the hot carrier temperature to the laser intensity is determined as a function of milling dose.

Keywords: Indium Tin Oxide; Patterned Film; Focused Ion Beam; Irradiation Dose; Femtosecond Pulses; Nonlinear Photoluminescence; Hot Electrons; Thermal Coefficient

Domains: Optics [physics.optics]

Florian Dell'Ova, Konstantin Malchow, Rémi Chassagnon, Olivier Heintz, Nicolas Pocholle, et al.. Hot Carriers-Induced Nonlinear Photoluminescence in Thin Indium Tin Oxide Layer Patterned by Ga Ion Beam Milling. ACS Applied Optical Materials, 2022, ⟨10.1021/acsaom.2c00046⟩. ⟨hal-03784092⟩