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A fully in-situ reflectometer in G band in 55 nm SiGe BiCMOS

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Abstract

This paper describes an in-situ reflectometer for one port VNA in 160 to 200 GHz band (G Band). The proposed system is fabricated in 55 nm SiGe BiCMOS technology from STMicroelectronics. Measured performances of system shown 110 mW of power DC consumption from a 1.2 V supply. A 180 GHz nMOS is measured as the device-under-test (DUT) after an in-situ calibration. The results obtained using this fully integrated VNA have been compared to a commercial VNA. A discrepancy of 0.3 dB is noted between the two systems on magnitude over a wide frequency range 172-192 GHz. Without calibration, the “raw” dynamics range of the system is limited by the directivity of the coupler which is 20 dB at 140-220 GHz. This dynamic will be improved after the calibration. The SiGe chip size is 3.3 mm2 . To our best knowledge, the presented in-situ VNA have the first results compared to the recently published and are the first with an in-situ calibration integrated in SiGe or CMOS technologies.
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Dates and versions

hal-03788144 , version 1 (06-12-2022)

Licence

Attribution - CC BY 4.0

Identifiers

Cite

Walid Aouimeur, Sylvie Lepilliet, Christophe Gaquière, Estelle Lauga-Larroze, Jean-Daniel Arnould, et al.. A fully in-situ reflectometer in G band in 55 nm SiGe BiCMOS. INMMIC 2018 - International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, Jul 2018, Brive La Gaillarde, France. pp.1-3, ⟨10.1109/INMMIC.2018.8430015⟩. ⟨hal-03788144⟩
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