Strain evolution of SiGe-on-insulator obtained by the Ge-condensation technique

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Victor Boureau, Shay Reboh, Daniel Benoit, Martin Hÿtch, Alain Claverie. Strain evolution of SiGe-on-insulator obtained by the Ge-condensation technique. APL Materials, AIP Publishing 2019, 7 (4), pp.041120. ⟨10.1063/1.5088441⟩. ⟨hal-02117672⟩

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