Single G centers in silicon fabricated by co-implantation with carbon and proton - Archive ouverte HAL Access content directly
Journal Articles Applied Physics Letters Year : 2022

Single G centers in silicon fabricated by co-implantation with carbon and proton

Yoann Baron
Alrik Durand
Tobias Herzig
Sébastien Pezzagna
Jan Meijer
Isabelle Robert-Philip
Vincent Jacques
Guillaume Cassabois
Anaïs Dréau

Abstract

We report the fabrication of isolated G centers in silicon with single photon emission at optical telecommunication wavelengths. Our sample is made from a silicon-on-insulator wafer, which is locally implanted with carbon ions and protons at various fluences. Decreasing the implantation fluences enables us to gradually switch from large ensembles to isolated single defects, reaching areal densities of G centers down to ∼0.2 μm$^{−2}$ . Single defect creation is demonstrated by photon antibunching in intensity-correlation experiments, thus establishing our approach as an effective procedure for generating single artificial atoms in silicon for future quantum technologies.
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Dates and versions

hal-03967286 , version 1 (01-02-2023)

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Yoann Baron, Alrik Durand, Tobias Herzig, Mario Khoury, Sébastien Pezzagna, et al.. Single G centers in silicon fabricated by co-implantation with carbon and proton. Applied Physics Letters, 2022, 121 (8), pp.084003. ⟨10.1063/5.0097407⟩. ⟨hal-03967286⟩
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